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Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.00.2 2.00.2 (0.8) 3.00.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximum Ratings (Ta = 25C)
Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 -12 2 2 2 20 -10 to +70 -20 to +150 Unit V V mA mA mA mW C C
1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
15.60.5
(0.8)
0.75 max.
7.6
1: Drain 2: Gate 3: Source NS-B1 Package
I Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Mutual conductance Symbol IDSS* gm NV Conditions VDS = 4.5V, VGS = 0, RS = 2.2k 1% VDS = 4.5V, VGS = 0 RS = 2.2k 1%, f = 1kHz VDS = 4.5V, RS = 2.2k 1% CG = 10pF, A-curve VDS = 4.5V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 12V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 1V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz -10 -9.5 -11 min 0.04 300 500 typ max 0.8 Unit mA S 4 V dB
Noise figure
GV1* Voltage gain GV2* GV3*
*
dB
dB
IDSS rank classification and GV value Runk IDSS (mA) GV1 (dB) GV2 (dB) | GV1 - GV2 | (dB) P 0.04 to 0.2 > -13 > -12 <3 Q 0.15 to 0.8 > -12 > -11 <3 Note) The part number in the parenthesis shows conventional part number.
241
Silicon Junction FETs (Small Signal)
PD Ta
24 800 Ta=25C 700 20 VGS=0V 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 - 0.1V - 0.2V - 0.3V - 0.4V - 0.5V - 0.6V - 0.7V 10 12 1.0
2SK0065
ID VDS
1.2 VDS=4.5V
ID VGS
Allowable power dissipation PD (mW)
16
Drain current ID (mA)
Drain current ID (A)
600
0.8
12
0.6 Ta=-25C 0.4 25C
8
Topr max.
75C 0.2
4
0
0 -2.0
-1.6
-1.2
- 0.8
- 0.4
0
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
gm VGS
1.2 VDS=4.5V f=1kHz Ta=25C 1.2 IDSS=0.9mA VDS=4.5V f=1kHz Ta=25C
gm ID
24 IDSS=0.9mA 20
NF ID
VDS=4.5V Rg=100kW Ta=25C
Mutual conductance gm (mS)
1.0
Mutual conductance gm (mS)
1.0
0.3mA 0.8 0.1mA 0.6
0.8
Noise figure NF (dB)
16 f=100Hz 12 1kHz 8 10kHz
0.6
0.3mA
0.4 0.1mA
0.4
0.2
0.2
4
0 -1.0
0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.2 0.4 0.6 0.8 1.0
Gate to source voltage VGS (V)
Drain current ID (mA)
Drain current ID (mA)
NF Rg
24 VDS=4.5V ID=300A Ta=25C 16 14
NF f
VDS=4.5V ID=300A Ta=25C
20
Noise figure NF (dB)
f=100Hz 16 1kHz 12
Noise figure NF (dB)
12 10 8 Rg=10k 6 4 2 1000k 100k
10kHz
8
4
0 0.1
0.3
1
3
10
30
100
0 0.01 0.03
0.1
0.3
1
3
10
Signal source resistance Rg (k)
Frequency f (KHz)
242
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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